Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Mauro Mosca, Pirouz Sohi, Nicolas Grandjean, Yao Chen, Nicolas Grandjean, Mauro Mosca, Jean-Francois Carlin

Risultato della ricerca: Article

3 Citazioni (Scopus)

Abstract

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n ++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (<800 °C) was used to hinder Mg-passivation by hydrogen in the p ++-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.
Lingua originaleEnglish
pagine (da-a)015002-
Numero di pagine7
RivistaSemiconductor Science and Technology
Volume34
Stato di pubblicazionePublished - 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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