Long-Wavelength Monolithic GaInNAs Vertical-Cavity Optical Amplifiers

Roberto Macaluso, Sun, Markus Pessa, Antony H. Clark, Janne Kontinnen, Stephane Calvez, Roberto Macaluso, Tomi Jouhti, Dawson, Laurand

Risultato della ricerca: Articlepeer review

27 Citazioni (Scopus)


We report on the continuous-wave amplificationcharacteristics of an optically pumped 1.3- micron multiple-quantum-well GaInNAs–GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated inreflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was 9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlledtuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.
Lingua originaleEnglish
pagine (da-a)878-883
RivistaIEEE Journal of Quantum Electronics
Stato di pubblicazionePublished - 2004

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.3100.3104???
  • ???subjectarea.asjc.2200.2208???


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