Layout influence on microwave performance of graphene field effect transistors

Salvatore Stivala; Alessandro Busacca; Marco Angelo Giambra; Antonio Benfante; Riccardo Pernice; Alfonso Carmelo Cino; Enrico Calandra; Wolfram H. P. Pernice; Romain Danneau; null Miseikis; Marco A. Giambra; null Ahn; null Jang

Layout influence on microwave performance of graphene field effect transistors

Salvatore Stivala, Alessandro Busacca, Marco Angelo Giambra, Antonio Benfante, Riccardo Pernice, Alfonso Carmelo Cino, Enrico Calandra, Wolfram H. P. Pernice, Romain Danneau, Miseikis, Marco A. Giambra, Ahn, Jang

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Risultato della ricerca: Article

4 Citazioni (Scopus)

Abstract

The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.

Lingua originale	English
pagine (da-a)	984-986
Numero di pagine	3
Rivista	Electronics Letters
Volume	54
Stato di pubblicazione	Published - 2018

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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Stivala, S., Busacca, A., Giambra, M. A., Benfante, A., Pernice, R., Cino, A. C., Calandra, E., Pernice, W. H. P., Danneau, R., Miseikis, Giambra, M. A., Ahn, & Jang (2018). Layout influence on microwave performance of graphene field effect transistors. Electronics Letters, 54, 984-986.

Layout influence on microwave performance of graphene field effect transistors. / Stivala, Salvatore ; Busacca, Alessandro ; Giambra, Marco Angelo ; Benfante, Antonio ; Pernice, Riccardo ; Cino, Alfonso Carmelo ; Calandra, Enrico; Pernice, Wolfram H. P.; Danneau, Romain; Miseikis; Giambra, Marco A.; Ahn; Jang.

In: Electronics Letters, Vol. 54, 2018, pag. 984-986.

Risultato della ricerca: Article

Stivala, Salvatore ; Busacca, Alessandro ; Giambra, Marco Angelo ; Benfante, Antonio ; Pernice, Riccardo ; Cino, Alfonso Carmelo ; Calandra, Enrico ; Pernice, Wolfram H. P. ; Danneau, Romain ; Miseikis ; Giambra, Marco A. ; Ahn ; Jang. / Layout influence on microwave performance of graphene field effect transistors. In: Electronics Letters. 2018 ; Vol. 54. pagg. 984-986.

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abstract = "The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.",

author = "Salvatore Stivala and Alessandro Busacca and Giambra, {Marco Angelo} and Antonio Benfante and Riccardo Pernice and Cino, {Alfonso Carmelo} and Enrico Calandra and Pernice, {Wolfram H. P.} and Romain Danneau and Miseikis and Giambra, {Marco A.} and Ahn and Jang",

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AU - Stivala, Salvatore

AU - Busacca, Alessandro

AU - Giambra, Marco Angelo

AU - Benfante, Antonio

AU - Pernice, Riccardo

AU - Cino, Alfonso Carmelo

AU - Calandra, Enrico

AU - Pernice, Wolfram H. P.

AU - Danneau, Romain

AU - Miseikis, null

AU - Giambra, Marco A.

AU - Ahn, null

AU - Jang, null

PY - 2018

Y1 - 2018

N2 - The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.

AB - The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.

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