Layout influence on microwave performance of graphene field effect transistors

Salvatore Stivala, Alessandro Busacca, Marco Angelo Giambra, Antonio Benfante, Riccardo Pernice, Alfonso Carmelo Cino, Enrico Calandra, Wolfram H. P. Pernice, Romain Danneau, Miseikis, Marco A. Giambra, Ahn, Jang

Risultato della ricerca: Article

4 Citazioni (Scopus)


The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.
Lingua originaleEnglish
pagine (da-a)984-986
Numero di pagine3
RivistaElectronics Letters
Stato di pubblicazionePublished - 2018

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Entra nei temi di ricerca di 'Layout influence on microwave performance of graphene field effect transistors'. Insieme formano una fingerprint unica.

  • Cita questo