Abstract
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.
Lingua originale | English |
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pagine (da-a) | 984-986 |
Numero di pagine | 3 |
Rivista | Electronics Letters |
Volume | 54 |
Stato di pubblicazione | Published - 2018 |
All Science Journal Classification (ASJC) codes
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