Layout influence on microwave performance of graphene field effect transistors

Enrico Calandra, Riccardo Pernice, Alfonso Carmelo Cino, Marco Angelo Giambra, Salvatore Stivala, Alessandro Busacca, Antonio Benfante, Wolfram H. P. Pernice, Romain Danneau, Miseikis, Marco A. Giambra, Ahn, Jang

Risultato della ricerca: Articlepeer review

5 Citazioni (Scopus)


The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.
Lingua originaleEnglish
pagine (da-a)984-986
Numero di pagine3
RivistaElectronics Letters
Stato di pubblicazionePublished - 2018

All Science Journal Classification (ASJC) codes

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