Lattice matched GaN/InAlN waveguides at λ = 1.55 μm grown by metalorganic vapor phase epitaxy

Mauro Mosca, Baumann, Pozzovivo, Julien, Lupu, Nicolas Grandjean, Mauro Mosca, Hofstetter, Strasser, Carlin, Golka, Nicolay, Eric Feltin, Giorgetta

Risultato della ricerca: Articlepeer review

28 Citazioni (Scopus)

Abstract

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-μm-wide WGs the propagation losses in the 1.5- to 1.58-μm spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.
Lingua originaleEnglish
pagine (da-a)102-104
RivistaIEEE Photonics Technology Letters
Volume20
Stato di pubblicazionePublished - 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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