A noise analysis procedure for microwave devices based on Langevin approach is presented.The device is represented by its equivalent circuit with the internal noise sourcesincluded as stochastic processes. Fromthe circuit network analysis a stochastic integralequation for the output voltage is derived and fromits power spectrumthe noise figureas a function of the operating frequency is obtained. The theoretical results havebeen compared with experimental data obtained by the characterization of an HEMTtransistor series (NE20283A, by NEC) from6 to 18 GHz at a low noise bias point. Thereported procedure exhibits good accuracy, within the typical uncertainty range of anyexperimental determination. The approach allows to extract all the information requiredfor a complete knowledge of the noise performance of the device without any restrictionon the statistics of the noise sources.
|Rivista||Fluctuation and Noise Letters|
|Stato di pubblicazione||Published - 2004|
All Science Journal Classification (ASJC) codes