Threshold voltage (Vth) and drain-source current (Ids) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation withphotons and ions. Vth loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ duringirradiation with photons and ions reveal a step-like increase of Ids with the total irradiation dose. A brief physical explanation is also provided.
|Numero di pagine||5|
|Rivista||IEEE Transactions on Nuclear Science|
|Stato di pubblicazione||Published - 2012|
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering