Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation

Elio Angelo Tomarchio

Risultato della ricerca: Other › peer review

Abstract

N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
Lingua originaleEnglish
Numero di pagine6
Stato di pubblicazionePublished - 2017

Altri file e collegamenti

Fingerprint Entra nei temi di ricerca di 'Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation'. Insieme formano una fingerprint unica.

Cita questo