Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation

Risultato della ricerca: Otherpeer review

Abstract

N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
Lingua originaleEnglish
Numero di pagine6
Stato di pubblicazionePublished - 2017

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