Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

In this work, we report on the design, fabrication and characterization of Metal-OxideGraphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancingthe device transconductance. The fabricated devices employ clamped metal contacts also for source anddrain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasiticresistance. Our experimental results demonstrate that MOGFETs with the proposed structure showimproved high frequency performance, in terms of maximum available gain and transition frequencyvalues, as a consequence of the higher equivalent transconductance obtained.