Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Pasquale Cusumano, Salvatore Stivala, Claudio Arnone, Alessandro Busacca, Riccardo Pernice, Antonio Benfante, Marco Angelo Giambra, Enrico Calandra, Wolfram H. P. Pernice, Wolfram H.P. Pernice, Romain Danneau, Maximillian Thurmer, Maximillian Thürmer, Christian Benz, Fan Wu, Marco A. Giambra, Geethu Balachandran, Jong-Hyun Ahn, Himadri Pandey, Min-Ho JangGeethu Balachandran, Muraleetharan Boopathi, Geethu Balachandran, Muraleetharan Boopathi, Himadri Pandey

Risultato della ricerca: Articlepeer review


In this work, we report on the design, fabrication and characterization of Metal-OxideGraphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancingthe device transconductance. The fabricated devices employ clamped metal contacts also for source anddrain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasiticresistance. Our experimental results demonstrate that MOGFETs with the proposed structure showimproved high frequency performance, in terms of maximum available gain and transition frequencyvalues, as a consequence of the higher equivalent transconductance obtained.
Lingua originaleEnglish
pagine (da-a)964-968
Numero di pagine5
RivistaIEEE Journal of the Electron Devices Society
Stato di pubblicazionePublished - 2019

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.2500.2504???
  • ???subjectarea.asjc.2200.2208???


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