Investigation of the impact of neutron irradiation on SiC power MOSFETs lifetime by reliability tests

Leonardo Abbene, Fabio Principato, Anna K. Baginska, Barbara M. Grüner, Philip Dujardin, Sebastian Urban, Marcello Mirabello

Risultato della ricerca: Articlepeer review

Abstract

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were con-ducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence up to 2 × 1011 (n/cm2). Electrical characterization performed pre and post-irradiation on different part number of power devices (Si, SiC MOSFETs and IGBTs) which survived to neutron irradiation tests does not show alteration of the data-sheet electrical parameters due to neutron interaction with the device.
Lingua originaleEnglish
Numero di pagine13
RivistaSensors
Volume21
Stato di pubblicazionePublished - 2021

All Science Journal Classification (ASJC) codes

  • ???subjectarea.asjc.1600.1602???
  • ???subjectarea.asjc.1700.1710???
  • ???subjectarea.asjc.3100.3107???
  • ???subjectarea.asjc.1300.1303???
  • ???subjectarea.asjc.3100.3105???
  • ???subjectarea.asjc.2200.2208???

Fingerprint

Entra nei temi di ricerca di 'Investigation of the impact of neutron irradiation on SiC power MOSFETs lifetime by reliability tests'. Insieme formano una fingerprint unica.

Cita questo