Abstract
High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were con-ducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence up to 2 × 1011 (n/cm2). Electrical characterization performed pre and post-irradiation on different part number of power devices (Si, SiC MOSFETs and IGBTs) which survived to neutron irradiation tests does not show alteration of the data-sheet electrical parameters due to neutron interaction with the device.
| Lingua originale | English |
|---|---|
| Numero di pagine | 13 |
| Rivista | Sensors |
| Volume | 21 |
| Stato di pubblicazione | Published - 2021 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.1600.1602???
- ???subjectarea.asjc.1700.1710???
- ???subjectarea.asjc.3100.3107???
- ???subjectarea.asjc.1300.1303???
- ???subjectarea.asjc.3100.3105???
- ???subjectarea.asjc.2200.2208???