Intrinsic generation of OH groups in dry silicon dioxide upon thermal treatments

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Abstract

We show the existence of an intrinsic generation mechanism of OH groups in synthetic dry silica upon thermal treatments. Samples are treated for ~160 h at 390 °C in He at 2.7 or 180 bar, and the growth of the OH IR absorption band at 3670 cm−1 is observed. An OH concentration of ~10^18 cm^−3 is estimated. Possible contributions of reactions with molecules absorbed from the atmosphere are excluded. Reactions with H2O already contained in the samples are rejected by IR measurements. The observed OH generation is attributed to the reaction of network sites with H2 already present in the material. Possible reaction paths are examined
Lingua originaleEnglish
pagine (da-a)151906 1-3
Numero di pagine3
RivistaApplied Physics Letters
Volume93
Stato di pubblicazionePublished - 2008

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silicon dioxide
absorption spectra
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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title = "Intrinsic generation of OH groups in dry silicon dioxide upon thermal treatments",
abstract = "We show the existence of an intrinsic generation mechanism of OH groups in synthetic dry silica upon thermal treatments. Samples are treated for ~160 h at 390 °C in He at 2.7 or 180 bar, and the growth of the OH IR absorption band at 3670 cm−1 is observed. An OH concentration of ~10^18 cm^−3 is estimated. Possible contributions of reactions with molecules absorbed from the atmosphere are excluded. Reactions with H2O already contained in the samples are rejected by IR measurements. The observed OH generation is attributed to the reaction of network sites with H2 already present in the material. Possible reaction paths are examined",
author = "Roberto Boscaino and Simonpietro Agnello and Laura Nuccio",
year = "2008",
language = "English",
volume = "93",
pages = "151906 1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Intrinsic generation of OH groups in dry silicon dioxide upon thermal treatments

AU - Boscaino, Roberto

AU - Agnello, Simonpietro

AU - Nuccio, Laura

PY - 2008

Y1 - 2008

N2 - We show the existence of an intrinsic generation mechanism of OH groups in synthetic dry silica upon thermal treatments. Samples are treated for ~160 h at 390 °C in He at 2.7 or 180 bar, and the growth of the OH IR absorption band at 3670 cm−1 is observed. An OH concentration of ~10^18 cm^−3 is estimated. Possible contributions of reactions with molecules absorbed from the atmosphere are excluded. Reactions with H2O already contained in the samples are rejected by IR measurements. The observed OH generation is attributed to the reaction of network sites with H2 already present in the material. Possible reaction paths are examined

AB - We show the existence of an intrinsic generation mechanism of OH groups in synthetic dry silica upon thermal treatments. Samples are treated for ~160 h at 390 °C in He at 2.7 or 180 bar, and the growth of the OH IR absorption band at 3670 cm−1 is observed. An OH concentration of ~10^18 cm^−3 is estimated. Possible contributions of reactions with molecules absorbed from the atmosphere are excluded. Reactions with H2O already contained in the samples are rejected by IR measurements. The observed OH generation is attributed to the reaction of network sites with H2 already present in the material. Possible reaction paths are examined

UR - http://hdl.handle.net/10447/38970

M3 - Article

VL - 93

SP - 1519061

EP - 1519063

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -