Interfacial disorder of graphene grown at high temperatures on 4H-SiC(000-1)

Simonpietro Agnello, Giannazzo, Deretzis, Yakimova, Piazza, Fisichella, Roccaforte, La Magna, Giuseppe Nicotra, Corrado Spinella

Risultato della ricerca: Other

Abstract

This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 ºC) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy showed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been discussed.
Lingua originaleEnglish
Pagine1129-1132
Numero di pagine4
Stato di pubblicazionePublished - 2016

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cita questo

Agnello, S., Giannazzo, Deretzis, Yakimova, Piazza, Fisichella, Roccaforte, La Magna, Nicotra, G., & Spinella, C. (2016). Interfacial disorder of graphene grown at high temperatures on 4H-SiC(000-1). 1129-1132.