TY - CONF
T1 - Interfacial disorder of graphene grown at high temperatures on 4H-SiC(000-1)
AU - Agnello, Simonpietro
AU - Giannazzo, null
AU - Deretzis, null
AU - Yakimova, null
AU - Piazza, null
AU - Fisichella, null
AU - Roccaforte, null
AU - La Magna, null
AU - Nicotra, Giuseppe
AU - Spinella, Corrado
PY - 2016
Y1 - 2016
N2 - This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 ºC) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy showed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been discussed.
AB - This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 ºC) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy showed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been discussed.
KW - AFM
KW - C face
KW - Condensed Matter Physics
KW - Graphene
KW - Interfacial disorder
KW - Materials Science (all)
KW - Mechanical Engineering
KW - Mechanics of Materials
KW - Raman
KW - STEM
KW - AFM
KW - C face
KW - Condensed Matter Physics
KW - Graphene
KW - Interfacial disorder
KW - Materials Science (all)
KW - Mechanical Engineering
KW - Mechanics of Materials
KW - Raman
KW - STEM
UR - http://hdl.handle.net/10447/225200
UR - http://www.ttp.net/0255-5476.html
M3 - Other
SP - 1129
EP - 1132
ER -