Infrared detection in multifunctional graphene-based transistors

Risultato della ricerca: Other contribution


In the last years great attention has been paid to graphene-based devices for optoelectronic applications such as photodetection. In this work, we report on Graphene Field Effect Transistors (GFETs) photoelectrical response due to the photo-transistor effect. Photoelectrical measurements were performed using a 1.55 μm erbium fiber laser. Optical measurements as a function of both the incident laser power and the DC bias of the fabricated devices have been carried out and show that photocurrent increases with the power of the IR beam illuminating the sample.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2016


Entra nei temi di ricerca di 'Infrared detection in multifunctional graphene-based transistors'. Insieme formano una fingerprint unica.

Cita questo