Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E’Ge defects in Ge-doped silica

Messina, G; Carpanese, M

Risultato della ricerca: Paper

Lingua originaleEnglish
Stato di pubblicazionePublished - 2010

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@conference{2a718eefb4eb4ea78e4893e8fc9b20c6,
title = "Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E’Ge defects in Ge-doped silica",
author = "{Messina, G; Carpanese, M} and Gelardi, {Franco Mario} and Simonpietro Agnello and Antonino Alessi",
year = "2010",
language = "English",

}

TY - CONF

T1 - Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E’Ge defects in Ge-doped silica

AU - Messina, G; Carpanese, M

AU - Gelardi, Franco Mario

AU - Agnello, Simonpietro

AU - Alessi, Antonino

PY - 2010

Y1 - 2010

UR - http://hdl.handle.net/10447/58085

M3 - Paper

ER -