In situ monitoring of pulsed laser indium-tin-oxide film deposition by optical emission spectroscopy

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18 Citazioni (Scopus)

Abstract

We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pressure into the chamber in order to keep the InO line amplitude at a predetermined value. © 2001 Elsevier Science B.V. All rights reserved.
Lingua originaleEnglish
pagine (da-a)743-751
Numero di pagine9
RivistaSpectrochimica Acta, Part B: Atomic Spectroscopy
Volume56
Stato di pubblicazionePublished - 2001

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Optical emission spectroscopy
optical emission spectroscopy
Tin oxides
Pulsed lasers
indium oxides
Indium
tin oxides
Oxide films
oxide films
pulsed lasers
Oxygen
ITO (semiconductors)
Monitoring
Laser ablation
Ablation
oxygen
ultraviolet lasers
Plasmas
Thin films
laser ablation

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Spectroscopy
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cita questo

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title = "In situ monitoring of pulsed laser indium-tin-oxide film deposition by optical emission spectroscopy",
abstract = "We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pressure into the chamber in order to keep the InO line amplitude at a predetermined value. {\circledC} 2001 Elsevier Science B.V. All rights reserved.",
author = "Claudio Cali' and Roberto Macaluso and Mauro Mosca",
year = "2001",
language = "English",
volume = "56",
pages = "743--751",
journal = "Spectrochimica Acta, Part B: Atomic Spectroscopy",
issn = "0584-8547",
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}

TY - JOUR

T1 - In situ monitoring of pulsed laser indium-tin-oxide film deposition by optical emission spectroscopy

AU - Cali', Claudio

AU - Macaluso, Roberto

AU - Mosca, Mauro

PY - 2001

Y1 - 2001

N2 - We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pressure into the chamber in order to keep the InO line amplitude at a predetermined value. © 2001 Elsevier Science B.V. All rights reserved.

AB - We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pressure into the chamber in order to keep the InO line amplitude at a predetermined value. © 2001 Elsevier Science B.V. All rights reserved.

UR - http://hdl.handle.net/10447/44268

M3 - Article

VL - 56

SP - 743

EP - 751

JO - Spectrochimica Acta, Part B: Atomic Spectroscopy

JF - Spectrochimica Acta, Part B: Atomic Spectroscopy

SN - 0584-8547

ER -