Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric

Isodiana Crupi, Spitale, Lombardo, Corso, Isodiana Crupi, Gerardi

Risultato della ricerca: Article

2 Citazioni (Scopus)

Abstract

In this paper nanocrystals memories program curves are shown and their saturation points (steady state condition) can be observed. We present a model that relates the voltage shift at the steady state (ΔVTss) to the gate program voltage (VG). Starting from a good agreement between experimental data and simulations for nanocrystals memory cells with a conventional dielectric structure (SiO2), we present the estimated values of the ΔVTss vs VG for different control stacks. Our investigation shows an improvement if a material with a high dielectric constant and a small conduction band-offset with respect to the SiO2, is placed between two SiO2 layers when the first of them is very thin. © 2004 Elsevier Ltd. All rights reserved.
Lingua originaleEnglish
pagine (da-a)895-898
Numero di pagine4
RivistaMICROELECTRONICS RELIABILITY
Volume45
Stato di pubblicazionePublished - 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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