Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

Bartolomeo Megna, Roberto Macaluso, Isodiana Crupi, Boughelout, Kechouane, Aida

Risultato della ricerca: Article

3 Citazioni (Scopus)

Abstract

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime.
Lingua originaleEnglish
pagine (da-a)4381-4388
Numero di pagine8
RivistaJournal of Electronic Materials
Volume48
Stato di pubblicazionePublished - 2019

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Heterojunctions
heterojunctions
interlayers
leakage
electrical properties
Leakage currents
Electric properties
energy bands
oxide films
insertion
surface roughness
roughness
grain size
diodes
Band structure
X ray diffraction analysis
Oxide films
optical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cita questo

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title = "Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition",
abstract = "Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime.",
author = "Bartolomeo Megna and Roberto Macaluso and Isodiana Crupi and Boughelout and Kechouane and Aida",
year = "2019",
language = "English",
volume = "48",
pages = "4381--4388",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",

}

TY - JOUR

T1 - Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

AU - Megna, Bartolomeo

AU - Macaluso, Roberto

AU - Crupi, Isodiana

AU - Boughelout, null

AU - Kechouane, null

AU - Aida, null

PY - 2019

Y1 - 2019

N2 - Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime.

AB - Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibited remarkable diode behavior and good rectifying character with low leakage current under reverse bias. The presence of the ZnO interlayer film significantly reduced the parasitic and leakage currents across the barrier, improved the quality of the heterostructure, made the energy band between AZO and Cu2O layers smoother, and eliminated the possibility of interface recombination, leading to much longer electron lifetime.

UR - http://hdl.handle.net/10447/353507

UR - https://link.springer.com/article/10.1007/s11664-019-07195-6

M3 - Article

VL - 48

SP - 4381

EP - 4388

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

ER -