The impact of transparent electrically conducting oxide (TCO) on the admittance measurements of thinfilm p–i–n a-Si:H solar cells was investigated. Admittance measurements on solar cell devices, with differentarea and geometry, in a wide range of frequencies and biases were performed. The admittancemeasurements of the investigated solar cells, which use the TCO as an electrical contact, showed thatthe high frequency admittance per area unit depends on the area. This effect increases both with theprobe frequency and the size of the solar cells. Transmission line model valid for strip geometry whichexplains how the resistivity of the TCO layer impacts the measured admittance of the p–i–n diode waspresented. An estimate of the critical length of the strip solar cell over which the measured diode capacitanceis affected by the TCO is given. The transmission line model allows to estimate also the lumpedparasitic series resistance Rs of solar cells with strip geometry.
|Numero di pagine||7|
|Rivista||APPLIED MATHEMATICS & INFORMATION SCIENCES|
|Stato di pubblicazione||Published - 2010|
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