How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

Isodiana Crupi; null Lacaita; null De Salvo; Gérard Ghibaudo; null Lombardo; null Mur; null Perniola; Valentina Ancarani; null Monzio Compagnoni; null Monzio Compagnoni; null Monzio Compagnoni; null Corso; null Gely; null Mariolle; null Toffoli; null Mazen; null Melanotte; Isodiana Crupi; null Ammendola; null Baldi; null Bez; null Semeria; null Deleonibus; null Ielmini; Giuseppe Nicotra; null Rimini; null Gerardi; null Pananakakis; null Puglisi; null Baron; null Spinelli; null Wan; null Van Der Jeugd

How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

Isodiana Crupi, Lacaita, De Salvo, Gérard Ghibaudo, Lombardo, Mur, Perniola, Valentina Ancarani, Monzio Compagnoni, Monzio Compagnoni, Monzio Compagnoni, Corso, Gely, Mariolle, Toffoli, Mazen, Melanotte, Isodiana Crupi, Ammendola, BaldiBez, Semeria, Deleonibus, Ielmini, Giuseppe Nicotra, Rimini, Gerardi, Pananakakis, Puglisi, Baron, Spinelli, Wan, Van Der Jeugd

Ingegneria

Risultato della ricerca: Other › peer review

136 Citazioni (Scopus)

Abstract

For the first time, memory devices with optimized high density (2E12#/cm2) LPCVD Si nanocrystals have been reproducibly achieved and studied on extensive statistical basis (from single cell up to 1Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND Flash at least to the 35nm and 65nm nodes, respectively.

Lingua originale	English
Pagine	597-600
Numero di pagine	4
Stato di pubblicazione	Published - 2003

All Science Journal Classification (ASJC) codes

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???subjectarea.asjc.3100.3104???
???subjectarea.asjc.2200.2208???
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Cita questo

Crupi, I, Lacaita, De Salvo, Ghibaudo, G, Lombardo, Mur, Perniola, Ancarani, V, Monzio Compagnoni, Monzio Compagnoni, Monzio Compagnoni, Corso, Gely, Mariolle, Toffoli, Mazen, Melanotte, Crupi, I, Ammendola, Baldi, Bez, Semeria, Deleonibus, Ielmini, Nicotra, G, Rimini, Gerardi, Pananakakis, Puglisi, Baron, Spinelli, Wan & Van Der Jeugd 2003, 'How far will Silicon nanocrystals push the scaling limits of NVMs technologies?', pagg. 597-600.

@conference{3a28de2a3fea47a7ab4a980bc65f4446,

title = "How far will Silicon nanocrystals push the scaling limits of NVMs technologies?",

abstract = "For the first time, memory devices with optimized high density (2E12#/cm2) LPCVD Si nanocrystals have been reproducibly achieved and studied on extensive statistical basis (from single cell up to 1Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND Flash at least to the 35nm and 65nm nodes, respectively.",

author = "Isodiana Crupi and Lacaita and {De Salvo} and G{\'e}rard Ghibaudo and Lombardo and Mur and Perniola and Valentina Ancarani and {Monzio Compagnoni} and {Monzio Compagnoni} and {Monzio Compagnoni} and Corso and Gely and Mariolle and Toffoli and Mazen and Melanotte and Isodiana Crupi and Ammendola and Baldi and Bez and Semeria and Deleonibus and Ielmini and Giuseppe Nicotra and Rimini and Gerardi and Pananakakis and Puglisi and Baron and Spinelli and Wan and {Van Der Jeugd}",

year = "2003",