How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

Isodiana Crupi, Lacaita, De Salvo, Gérard Ghibaudo, Lombardo, Mur, Perniola, Valentina Ancarani, Monzio Compagnoni, Monzio Compagnoni, Monzio Compagnoni, Corso, Gely, Mariolle, Toffoli, Mazen, Melanotte, Isodiana Crupi, Ammendola, BaldiBez, Semeria, Deleonibus, Ielmini, Giuseppe Nicotra, Rimini, Gerardi, Pananakakis, Puglisi, Baron, Spinelli, Wan, Van Der Jeugd

Risultato della ricerca: Otherpeer review

129 Citazioni (Scopus)

Abstract

For the first time, memory devices with optimized high density (2E12#/cm2) LPCVD Si nanocrystals have been reproducibly achieved and studied on extensive statistical basis (from single cell up to 1Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND Flash at least to the 35nm and 65nm nodes, respectively.
Lingua originaleEnglish
Pagine597-600
Numero di pagine4
Stato di pubblicazionePublished - 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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