High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Patrizia Livreri, Ilya Goykhman, Antonio Lombardo, Timofiy Khodkov, Takashi Taniguchi, Philipp Braeuninger-Weimer, Andrea C. Ferrari, David G. Purdie, Domenico De Fazio, Stijn Goossens, Kenji Watanabe, Anna K. Ott, Stephan Hofmann, Frank H. L. Koppens

Risultato della ricerca: Article

17 Citazioni (Scopus)

Abstract

We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120 000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
Lingua originaleEnglish
pagine (da-a)8926-8935
Numero di pagine10
RivistaACS Nano
Volume13
Stato di pubblicazionePublished - 2019

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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    Livreri, P., Goykhman, I., Lombardo, A., Khodkov, T., Taniguchi, T., Braeuninger-Weimer, P., Ferrari, A. C., Purdie, D. G., De Fazio, D., Goossens, S., Watanabe, K., Ott, A. K., Hofmann, S., & Koppens, F. H. L. (2019). High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition. ACS Nano, 13, 8926-8935.