Abstract
We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL withmore than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
Lingua originale | English |
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pagine (da-a) | 457-465 |
Numero di pagine | 9 |
Rivista | Journal of Crystal Growth |
Volume | 268 |
Stato di pubblicazione | Published - 2004 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.3100.3104???
- ???subjectarea.asjc.1600.1604???
- ???subjectarea.asjc.2500.2505???