GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications

Roberto Macaluso, Sun, Pessa, Smith, Smith, Antony H. Clark, Gundogdu, Calvez, Macaluso, Jouhti, Boggess, Hopkins, Dawson, Hall

Risultato della ricerca: Articlepeer review

32 Citazioni (Scopus)


We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL withmore than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.
Lingua originaleEnglish
pagine (da-a)457-465
Numero di pagine9
RivistaJournal of Crystal Growth
Stato di pubblicazionePublished - 2004

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.1600.1604???
  • ???subjectarea.asjc.2500.2505???


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