GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications

Roberto Macaluso; null Sun; null Pessa; null Smith; null Smith; Antony H. Clark; null Gundogdu; null Calvez; null Macaluso; null Jouhti; null Boggess; null Hopkins; null Dawson; null Hall

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications

Roberto Macaluso, Sun, Pessa, Smith, Smith, Antony H. Clark, Gundogdu, Calvez, Macaluso, Jouhti, Boggess, Hopkins, Dawson, Hall

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Risultato della ricerca: Article › peer review

32 Citazioni (Scopus)

Abstract

We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL withmore than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

Lingua originale	English
pagine (da-a)	457-465
Numero di pagine	9
Rivista	Journal of Crystal Growth
Volume	268
Stato di pubblicazione	Published - 2004

All Science Journal Classification (ASJC) codes

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???subjectarea.asjc.1600.1604???
???subjectarea.asjc.2500.2505???

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title = "GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications",

abstract = "We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL withmore than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.",

keywords = "Surface emitting lasers, Videodisks, semiconductor disk, Surface emitting lasers, Videodisks, semiconductor disk",

author = "Roberto Macaluso and Sun and Pessa and Smith and Smith and Clark, {Antony H.} and Gundogdu and Calvez and Macaluso and Jouhti and Boggess and Hopkins and Dawson and Hall",

year = "2004",

language = "English",

volume = "268",

pages = "457--465",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications

AU - Macaluso, Roberto

AU - Sun, null

AU - Pessa, null

AU - Smith, null

AU - Clark, Antony H.

AU - Gundogdu, null

AU - Calvez, null

AU - Macaluso, null

AU - Jouhti, null

AU - Boggess, null

AU - Hopkins, null

AU - Dawson, null

AU - Hall, null

PY - 2004

Y1 - 2004

N2 - We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL withmore than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

AB - We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL withmore than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.

KW - Surface emitting lasers

KW - Videodisks

KW - semiconductor disk

KW - Surface emitting lasers

KW - Videodisks

KW - semiconductor disk

UR - http://hdl.handle.net/10447/11722

M3 - Article

VL - 268

SP - 457

EP - 465

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications

Abstract

All Science Journal Classification (ASJC) codes

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