We report an experimental study on the comparison between the c- or b-ray induced Ge related pointdefects in Ge-doped silica. Silica samples doped with 2.2 1017 Ge atoms/cm3 produced with thesol–gel technique have been irradiated with c-ray or with b-ray. The effects of the irradiation have beeninvestigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopyin order to evaluate the generation and the dependence on dose of the Ge(1), E’Ge, GLPC (Germaniumlone pair center) and H(II) point defects. No relevant differences between the concentrations ofc- or b-ray induced Ge(1) and E’Ge point defects have been observed and, in addition, it has been foundthat both irradiations are able to induce GLPC with the same dose dependence. By contrast, the main differenceregards the formation of H(II) centers, their concentration being larger after c irradiation. It issuggested that the larger efficiency of H(II) generation is due to the specific mechanism involving Hreleased by irradiation, whereas the similarity of the formation of other Ge related defects speaks forthe occurrence of identical mechanisms induced by c or b irradiation.
|Numero di pagine||6|
|Rivista||Journal of Non-Crystalline Solids|
|Stato di pubblicazione||Published - 2010|
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