Abstract
We report on p-type doping of ZnO films grown by pulsed-laser deposition on InP substrates.Electrical properties change of the films, from n-type to p-type, has been observed after postgrowthannealing at 600°C for 1h in air.
Lingua originale | Italian |
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Numero di pagine | 0 |
Stato di pubblicazione | Published - 2012 |