Fast, high-efficiency Germanium quantum dot photodetectors

Isodiana Crupi, Pei Liu, Cosentino, Terrasi, Son T. Le, Lee, Maria Miritello, Isodiana Crupi, Pacifici, Paine, Zaslavsky, Mirabella

Risultato della ricerca: Other

1 Citazioni (Scopus)

Abstract

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.
Lingua originaleEnglish
Pagine1-3
Numero di pagine3
Stato di pubblicazionePublished - 2012

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cita questo

    Crupi, I., Liu, P., Cosentino, Terrasi, Le, S. T., Lee, Miritello, M., Crupi, I., Pacifici, Paine, Zaslavsky, & Mirabella (2012). Fast, high-efficiency Germanium quantum dot photodetectors. 1-3.