Fast, high-efficiency Germanium quantum dot photodetectors

Isodiana Crupi, Maria Miritello, Pacifici, Paine, Zaslavsky, Mirabella, Pei Liu, Cosentino, Terrasi, Son T. Le, Lee

Risultato della ricerca: Paper

Abstract

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2012

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Photodetectors
Germanium
Semiconductor quantum dots
Quantum efficiency
Semiconductor materials
Wavelength
Metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cita questo

Crupi, I., Miritello, M., Pacifici, Paine, Zaslavsky, Mirabella, ... Lee (2012). Fast, high-efficiency Germanium quantum dot photodetectors.

Fast, high-efficiency Germanium quantum dot photodetectors. / Crupi, Isodiana; Miritello, Maria; Pacifici; Paine; Zaslavsky; Mirabella; Liu, Pei; Cosentino; Terrasi; Le, Son T.; Lee.

2012.

Risultato della ricerca: Paper

Crupi, I, Miritello, M, Pacifici, Paine, Zaslavsky, Mirabella, Liu, P, Cosentino, Terrasi, Le, ST & Lee 2012, 'Fast, high-efficiency Germanium quantum dot photodetectors'.
Crupi I, Miritello M, Pacifici, Paine, Zaslavsky, Mirabella e altri. Fast, high-efficiency Germanium quantum dot photodetectors. 2012.
Crupi, Isodiana ; Miritello, Maria ; Pacifici ; Paine ; Zaslavsky ; Mirabella ; Liu, Pei ; Cosentino ; Terrasi ; Le, Son T. ; Lee. / Fast, high-efficiency Germanium quantum dot photodetectors.
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title = "Fast, high-efficiency Germanium quantum dot photodetectors",
abstract = "We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700{\%} at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. {\circledC} 2012 IEEE.",
keywords = "Germanium; photodetector; quantum dots; Electrical and Electronic Engineering",
author = "Isodiana Crupi and Maria Miritello and Pacifici and Paine and Zaslavsky and Mirabella and Pei Liu and Cosentino and Terrasi and Le, {Son T.} and Lee",
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T1 - Fast, high-efficiency Germanium quantum dot photodetectors

AU - Crupi, Isodiana

AU - Miritello, Maria

AU - Pacifici, null

AU - Paine, null

AU - Zaslavsky, null

AU - Mirabella, null

AU - Liu, Pei

AU - Cosentino, null

AU - Terrasi, null

AU - Le, Son T.

AU - Lee, null

PY - 2012

Y1 - 2012

N2 - We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

AB - We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at-10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain. © 2012 IEEE.

KW - Germanium; photodetector; quantum dots; Electrical and Electronic Engineering

UR - http://hdl.handle.net/10447/179452

M3 - Paper

ER -