External noise effects on the electron velocity fluctuations in semiconductors

We investigate the modification of the intrinsic carrier noise spectraldensity induced in low-doped semiconductor materials by an external correlatednoise source added to the driving high-frequency periodic electricfield. A Monte Carlo approach is adopted to numerically solve the transportequation by considering all the possible scattering phenomena of thehot electrons in the medium. We show that the noise spectra are stronglyaffected by the intensity and the correlation time of the external randomelectric field. Moreover, this random field can cause a suppression of thetotal noise power.