External noise effects on the electron velocity fluctuations in semiconductors

Dominique Persano Adorno, Nicola Pizzolato, Bernardo Spagnolo, Pizzolato, Persano Adorno, Spagnolo

Risultato della ricerca: Articlepeer review

17 Citazioni (Scopus)

Abstract

We investigate the modification of the intrinsic carrier noise spectraldensity induced in low-doped semiconductor materials by an external correlatednoise source added to the driving high-frequency periodic electricfield. A Monte Carlo approach is adopted to numerically solve the transportequation by considering all the possible scattering phenomena of thehot electrons in the medium. We show that the noise spectra are stronglyaffected by the intensity and the correlation time of the external randomelectric field. Moreover, this random field can cause a suppression of thetotal noise power.
Lingua originaleEnglish
pagine (da-a)985-988
Numero di pagine4
RivistaActa Physica Polonica A
Volume113
Stato di pubblicazionePublished - 2008

All Science Journal Classification (ASJC) codes

  • ???subjectarea.asjc.3100.3100???

Fingerprint

Entra nei temi di ricerca di 'External noise effects on the electron velocity fluctuations in semiconductors'. Insieme formano una fingerprint unica.

Cita questo