TY - CONF

T1 - External noise effects in silicon MOS inversion layer

AU - Spagnolo, Bernardo

AU - Spezia, Stefano

AU - Pizzolato, Nicola

AU - Persano Adorno, Dominique

AU - Lodato, Maria Antonietta

PY - 2013

Y1 - 2013

N2 - In the present work we investigate the effect on the intrinsic noise caused by the
addition of an external correlated noise source in a quasi-two-dimensional electron
gas (2DEG) in a Silicon MOS inversion layer, driven by a high-frequency periodic
electric field in cyclostationary conditions. The electron dynamics is simulated
by a Monte Carlo procedure which keeps into account non-polar optical phonon and
acoustic phonon. In particular, in our modeling of the quasi-2DEG gas, (i) the
potential profile perpendicular to the MOS structure is assumed in the triangular
potential approximation, (ii) only the lowest three energy subbands are taken into
account and (iii) non-degenerate conditions are simulated.
With the aim to study the effect on the electron transport of the added fluctuations,
we calculate the changes in the spectral density of the velocity fluctuations, at
different values of field strength, lattice temperature, noise amplitude, noise
correlation time and width of the well. Our findings show that, under specific
conditions, the presence of a fluctuating component added to an oscillating electric
field can significantly affect the total noise power. Our study reveals that,
critically depending on the external noise correlation time, the dynamical response
of the quasi-2DEG driven by a periodic electric field receives a benefit by the
constructive interplay between the fluctuating field and the intrinsic noise of the
system.

AB - In the present work we investigate the effect on the intrinsic noise caused by the
addition of an external correlated noise source in a quasi-two-dimensional electron
gas (2DEG) in a Silicon MOS inversion layer, driven by a high-frequency periodic
electric field in cyclostationary conditions. The electron dynamics is simulated
by a Monte Carlo procedure which keeps into account non-polar optical phonon and
acoustic phonon. In particular, in our modeling of the quasi-2DEG gas, (i) the
potential profile perpendicular to the MOS structure is assumed in the triangular
potential approximation, (ii) only the lowest three energy subbands are taken into
account and (iii) non-degenerate conditions are simulated.
With the aim to study the effect on the electron transport of the added fluctuations,
we calculate the changes in the spectral density of the velocity fluctuations, at
different values of field strength, lattice temperature, noise amplitude, noise
correlation time and width of the well. Our findings show that, under specific
conditions, the presence of a fluctuating component added to an oscillating electric
field can significantly affect the total noise power. Our study reveals that,
critically depending on the external noise correlation time, the dynamical response
of the quasi-2DEG driven by a periodic electric field receives a benefit by the
constructive interplay between the fluctuating field and the intrinsic noise of the
system.

UR - http://hdl.handle.net/10447/65979

UR - https://gucia.if.uj.edu.pl/indico/contributionDisplay.py?contribId=34&sessionId=5&confId=0

M3 - Paper

ER -