External noise effects in silicon MOS inversion layer

Risultato della ricerca: Paperpeer review

4 Citazioni (Scopus)


In the present work we investigate the effect on the intrinsic noise caused by the addition of an external correlated noise source in a quasi-two-dimensional electron gas (2DEG) in a Silicon MOS inversion layer, driven by a high-frequency periodic electric field in cyclostationary conditions. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account non-polar optical phonon and acoustic phonon. In particular, in our modeling of the quasi-2DEG gas, (i) the potential profile perpendicular to the MOS structure is assumed in the triangular potential approximation, (ii) only the lowest three energy subbands are taken into account and (iii) non-degenerate conditions are simulated. With the aim to study the effect on the electron transport of the added fluctuations, we calculate the changes in the spectral density of the velocity fluctuations, at different values of field strength, lattice temperature, noise amplitude, noise correlation time and width of the well. Our findings show that, under specific conditions, the presence of a fluctuating component added to an oscillating electric field can significantly affect the total noise power. Our study reveals that, critically depending on the external noise correlation time, the dynamical response of the quasi-2DEG driven by a periodic electric field receives a benefit by the constructive interplay between the fluctuating field and the intrinsic noise of the system.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2013


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