External Noise Effects in Silicon MOS Inversion Layer

The effect of the addition of an external source of correlated noise onthe electron transport in silicon MOS inversion layer, driven by a staticelectric field, has been investigated. The electron dynamics is simulated bya Monte Carlo procedure which takes into account non-polar optical andacoustic phonons. In our modelling of the quasi-two-dimensional electrongas, the potential profile, perpendicular to the MOS structure, is assumedto follow the triangular potential approximation. We calculate the changesin both the autocorrelation function and the spectral density of the velocityfluctuations, at different values of noise amplitude and correlation time.The findings indicate that, the presence of a fluctuating component addedto the static electric field can affect the total noise power, i.e. the varianceof the electron velocity fluctuations. Moreover, this effect critically dependson both the amplitude of the driving electric field and the noise parameters.