Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate

Bernardo Spagnolo, Angelo Carollo, Ivan N. Antonov, Koryazhkina, Zdoroveyshchev, Novikov, Baranova, Angelo Carollo, Spagnolo, Dubkov, Oleg N. Gorshkov, Dmitry O. Filatov, Dmitry A. Antonov, Kruglov

Risultato della ricerca: Article

Abstract

We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.
Lingua originaleEnglish
pagine (da-a)024005-
Numero di pagine11
RivistaJournal of Statistical Mechanics: Theory and Experiment
Volume2020
Stato di pubblicazionePublished - 2020

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Statistics and Probability
  • Statistics, Probability and Uncertainty

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    Spagnolo, B., Carollo, A., Antonov, I. N., Koryazhkina, Zdoroveyshchev, Novikov, Baranova, Carollo, A., Spagnolo, Dubkov, Gorshkov, O. N., Filatov, D. O., Antonov, D. A., & Kruglov (2020). Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate. Journal of Statistical Mechanics: Theory and Experiment, 2020, 024005-.