Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate

Bernardo Spagnolo, Angelo Carollo, Ivan N. Antonov, Koryazhkina, Zdoroveyshchev, Novikov, Baranova, Angelo Carollo, Spagnolo, Dubkov, Oleg N. Gorshkov, Dmitry O. Filatov, Dmitry A. Antonov, Kruglov

Risultato della ricerca: Articlepeer review

2 Citazioni (Scopus)

Abstract

We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.
Lingua originaleEnglish
pagine (da-a)024005-
Numero di pagine11
RivistaJournal of Statistical Mechanics: Theory and Experiment
Volume2020
Stato di pubblicazionePublished - 2020

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.2600.2613???
  • ???subjectarea.asjc.1800.1804???

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