We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.
|Numero di pagine||11|
|Rivista||Journal of Statistical Mechanics: Theory and Experiment|
|Stato di pubblicazione||Published - 2020|
All Science Journal Classification (ASJC) codes
- Statistical and Nonlinear Physics
- Statistics and Probability
- Statistics, Probability and Uncertainty
Spagnolo, B., Carollo, A., Antonov, I. N., Koryazhkina, Zdoroveyshchev, Novikov, Baranova, Carollo, A., Spagnolo, Dubkov, Gorshkov, O. N., Filatov, D. O., Antonov, D. A., & Kruglov (2020). Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate. Journal of Statistical Mechanics: Theory and Experiment, 2020, 024005-.