Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMTs

Fabio Principato, Alina Caddemi, Gaetano Ferrante

Risultato della ricerca: Article

7 Citazioni (Scopus)

Abstract

The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization onset within the channel. In addition, the low frequency gate and drain noise has been measured at bias conditions below and above the kink to analyze its correlation with the processes involving discrete energy trap states. A Lorentzian noise contribution has been found in the drain noise spectrum traced at kink bias V-DS,V-kink with a corner frequency corresponding to that exhibited by the output conductance dispersion curve at the same bias. Thus, the devices under test classified as short-channel low-voltage GaAsFET's exhibit a marked kink effect whose origin is likely to be due trapping mechanisms. (c) 2005 Elsevier Ltd. All rights reserved.
Lingua originaleEnglish
pagine (da-a)915-922
Numero di pagine8
RivistaSolid-State Electronics
Volume49
Stato di pubblicazionePublished - 2005

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Impact ionization
High electron mobility transistors
high electron mobility transistors
low frequencies
Drain current
Electric potential
Leakage currents
traps
ionization
output
noise spectra
low currents
low voltage
low noise
aluminum gallium arsenides
high voltages
leakage
trapping
occurrences
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cita questo

Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMTs. / Principato, Fabio; Caddemi, Alina; Ferrante, Gaetano.

In: Solid-State Electronics, Vol. 49, 2005, pag. 915-922.

Risultato della ricerca: Article

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abstract = "The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization onset within the channel. In addition, the low frequency gate and drain noise has been measured at bias conditions below and above the kink to analyze its correlation with the processes involving discrete energy trap states. A Lorentzian noise contribution has been found in the drain noise spectrum traced at kink bias V-DS,V-kink with a corner frequency corresponding to that exhibited by the output conductance dispersion curve at the same bias. Thus, the devices under test classified as short-channel low-voltage GaAsFET's exhibit a marked kink effect whose origin is likely to be due trapping mechanisms. (c) 2005 Elsevier Ltd. All rights reserved.",
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AU - Principato, Fabio

AU - Caddemi, Alina

AU - Ferrante, Gaetano

PY - 2005

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N2 - The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization onset within the channel. In addition, the low frequency gate and drain noise has been measured at bias conditions below and above the kink to analyze its correlation with the processes involving discrete energy trap states. A Lorentzian noise contribution has been found in the drain noise spectrum traced at kink bias V-DS,V-kink with a corner frequency corresponding to that exhibited by the output conductance dispersion curve at the same bias. Thus, the devices under test classified as short-channel low-voltage GaAsFET's exhibit a marked kink effect whose origin is likely to be due trapping mechanisms. (c) 2005 Elsevier Ltd. All rights reserved.

AB - The kink effect in low-noise pseudomorphic (AlGaAs/InGaAs) HEMT's has been examined in detail by investigating the steady-state and pulsed I-V characteristics, the behavior of the output conductance dispersion and the performance of the gate leakage current to understand its origin. No clear evidence of impact ionization occurrence in the InGaAs channel at kink bias conditions (V-DS.kink = 1.5 V) has been found, thus suggesting that the predominant mechanism should be attributed to trap-related phenomena. A significant rise of the gate current has been found at very high drain voltages (far from V-DS.kink) associated with low drain current values which is probably due to impact ionization onset within the channel. In addition, the low frequency gate and drain noise has been measured at bias conditions below and above the kink to analyze its correlation with the processes involving discrete energy trap states. A Lorentzian noise contribution has been found in the drain noise spectrum traced at kink bias V-DS,V-kink with a corner frequency corresponding to that exhibited by the output conductance dispersion curve at the same bias. Thus, the devices under test classified as short-channel low-voltage GaAsFET's exhibit a marked kink effect whose origin is likely to be due trapping mechanisms. (c) 2005 Elsevier Ltd. All rights reserved.

UR - http://hdl.handle.net/10447/30123

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JO - Solid-State Electronics

JF - Solid-State Electronics

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