The electron spin relaxation process in n-type GaAs crystals driven by a fluctuatingelectric field is investigated. Two different sources of fluctuations are considered: (i) a symmetricdichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show,in both cases, an enhancement of the spin relaxation time by increasing the amplitude of theexternal noise. Moreover, we find that the electron spin lifetime vs. the noise correlation time:(i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows anonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlatednoise.
|Numero di pagine||6|
|Stato di pubblicazione||Published - 2013|
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