Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise

Risultato della ricerca: Articlepeer review

10 Citazioni (Scopus)

Abstract

The electron spin relaxation process in n-type GaAs crystals driven by a fluctuatingelectric field is investigated. Two different sources of fluctuations are considered: (i) a symmetricdichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show,in both cases, an enhancement of the spin relaxation time by increasing the amplitude of theexternal noise. Moreover, we find that the electron spin lifetime vs. the noise correlation time:(i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows anonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlatednoise.
Lingua originaleEnglish
pagine (da-a)47011-
Numero di pagine6
RivistaEurophysics Letters
Volume104
Stato di pubblicazionePublished - 2013

All Science Journal Classification (ASJC) codes

  • ???subjectarea.asjc.3100.3100???

Fingerprint Entra nei temi di ricerca di 'Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise'. Insieme formano una fingerprint unica.

Cita questo