Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs

Isodiana Crupi, Philippe J. Roussel, Bogdan Govoreanu, David P. Brunco, Isodiana Crupi, Jan Van Houdt, Robin Degraeve

Risultato della ricerca: Article

20 Citazioni (Scopus)

Abstract

The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack. © 2006 IEEE.
Lingua originaleEnglish
pagine (da-a)509-515
Numero di pagine7
RivistaIEEE Transactions on Device and Materials Reliability
Volume6
Stato di pubblicazionePublished - 2006

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Gate dielectrics
Spatial distribution
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cita questo

Crupi, I., Roussel, P. J., Govoreanu, B., Brunco, D. P., Crupi, I., Van Houdt, J., & Degraeve, R. (2006). Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs. IEEE Transactions on Device and Materials Reliability, 6, 509-515.

Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs. / Crupi, Isodiana; Roussel, Philippe J.; Govoreanu, Bogdan; Brunco, David P.; Crupi, Isodiana; Van Houdt, Jan; Degraeve, Robin.

In: IEEE Transactions on Device and Materials Reliability, Vol. 6, 2006, pag. 509-515.

Risultato della ricerca: Article

Crupi, I, Roussel, PJ, Govoreanu, B, Brunco, DP, Crupi, I, Van Houdt, J & Degraeve, R 2006, 'Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs', IEEE Transactions on Device and Materials Reliability, vol. 6, pagg. 509-515.
Crupi I, Roussel PJ, Govoreanu B, Brunco DP, Crupi I, Van Houdt J e altri. Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs. IEEE Transactions on Device and Materials Reliability. 2006;6:509-515.
Crupi, Isodiana ; Roussel, Philippe J. ; Govoreanu, Bogdan ; Brunco, David P. ; Crupi, Isodiana ; Van Houdt, Jan ; Degraeve, Robin. / Energy and spatial distribution of traps in SiO2/Al 2O3 nMOSFETs. In: IEEE Transactions on Device and Materials Reliability. 2006 ; Vol. 6. pagg. 509-515.
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AB - The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack. © 2006 IEEE.

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