Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

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4 Citazioni (Scopus)

Abstract

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.
Lingua originaleEnglish
pagine (da-a)1-7
Numero di pagine7
RivistaIEEE Photonics Journal
Volume10
Stato di pubblicazionePublished - 2018

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infrared radiation
Field effect transistors
Graphene
graphene
field effect transistors
Microwaves
Infrared radiation
microwaves
Infrared detectors
Gate dielectrics
infrared detectors
Sapphire
Chemical vapor deposition
Signal to noise ratio
Transistors
sapphire
signal to noise ratios
transistors
direct current
vapor deposition

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cita questo

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title = "Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection",
abstract = "In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.",
author = "Enrico Calandra and Giambra, {Marco Angelo} and Alessandro Busacca and Antonio Benfante and Cino, {Alfonso Carmelo} and Riccardo Pernice and Antonino Parisi and Salvatore Stivala and Romain Danneau and Simone Dehm and Giambra, {Marco A.} and Ralph Krupke",
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language = "English",
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TY - JOUR

T1 - Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

AU - Calandra, Enrico

AU - Giambra, Marco Angelo

AU - Busacca, Alessandro

AU - Benfante, Antonio

AU - Cino, Alfonso Carmelo

AU - Pernice, Riccardo

AU - Parisi, Antonino

AU - Stivala, Salvatore

AU - Danneau, Romain

AU - Dehm, Simone

AU - Giambra, Marco A.

AU - Krupke, Ralph

PY - 2018

Y1 - 2018

N2 - In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.

AB - In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.

UR - http://hdl.handle.net/10447/281482

UR - http://www.ieee.org

M3 - Article

VL - 10

SP - 1

EP - 7

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

SN - 1943-0655

ER -