Emission of real phonons due to electron's self-dressing in a covalent crystal

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Abstract

A slow monoelectronic excitation in a covalent crystal at the temperature T=0 is analyzed. The interaction with zero-point longitudinal acoustic phonons leads to the formation of a dressed electronic state at an energy level lower than that of the initial bare state. This aspect of the dressing process is described here by hypothesizing that the excess of energy is released with the emission of real phonons. Specifically, this paper considers the transition probability from the bare monoelectronic state to a dressed state of the electron accompanied by real phonons anda deformation field. The spectrum of the real phonons emitted during the electronic self-dressing is calculated by applying nonperturbative techniques based on the resolvent method. The present analysis indicates that the transition between the bare monoelectronic state and the asymptotic dressed state is accompanied, at the lowest order, by the appearance of two real phonons.
Lingua originaleEnglish
pagine (da-a)2597-2604
Numero di pagine8
RivistaJOURNAL OF THE OPTICAL SOCIETY OF AMERICA. B, OPTICAL PHYSICS
Volume28
Stato di pubblicazionePublished - 2011

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phonons
crystals
electrons
electronics
transition probabilities
energy levels
acoustics
excitation
interactions
temperature
energy

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

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title = "Emission of real phonons due to electron's self-dressing in a covalent crystal",
abstract = "A slow monoelectronic excitation in a covalent crystal at the temperature T=0 is analyzed. The interaction with zero-point longitudinal acoustic phonons leads to the formation of a dressed electronic state at an energy level lower than that of the initial bare state. This aspect of the dressing process is described here by hypothesizing that the excess of energy is released with the emission of real phonons. Specifically, this paper considers the transition probability from the bare monoelectronic state to a dressed state of the electron accompanied by real phonons anda deformation field. The spectrum of the real phonons emitted during the electronic self-dressing is calculated by applying nonperturbative techniques based on the resolvent method. The present analysis indicates that the transition between the bare monoelectronic state and the asymptotic dressed state is accompanied, at the lowest order, by the appearance of two real phonons.",
author = "Davide Valenti",
year = "2011",
language = "English",
volume = "28",
pages = "2597--2604",
journal = "Journal of the Optical Society of America B: Optical Physics",
issn = "0740-3224",
publisher = "The Optical Society",

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T1 - Emission of real phonons due to electron's self-dressing in a covalent crystal

AU - Valenti, Davide

PY - 2011

Y1 - 2011

N2 - A slow monoelectronic excitation in a covalent crystal at the temperature T=0 is analyzed. The interaction with zero-point longitudinal acoustic phonons leads to the formation of a dressed electronic state at an energy level lower than that of the initial bare state. This aspect of the dressing process is described here by hypothesizing that the excess of energy is released with the emission of real phonons. Specifically, this paper considers the transition probability from the bare monoelectronic state to a dressed state of the electron accompanied by real phonons anda deformation field. The spectrum of the real phonons emitted during the electronic self-dressing is calculated by applying nonperturbative techniques based on the resolvent method. The present analysis indicates that the transition between the bare monoelectronic state and the asymptotic dressed state is accompanied, at the lowest order, by the appearance of two real phonons.

AB - A slow monoelectronic excitation in a covalent crystal at the temperature T=0 is analyzed. The interaction with zero-point longitudinal acoustic phonons leads to the formation of a dressed electronic state at an energy level lower than that of the initial bare state. This aspect of the dressing process is described here by hypothesizing that the excess of energy is released with the emission of real phonons. Specifically, this paper considers the transition probability from the bare monoelectronic state to a dressed state of the electron accompanied by real phonons anda deformation field. The spectrum of the real phonons emitted during the electronic self-dressing is calculated by applying nonperturbative techniques based on the resolvent method. The present analysis indicates that the transition between the bare monoelectronic state and the asymptotic dressed state is accompanied, at the lowest order, by the appearance of two real phonons.

UR - http://hdl.handle.net/10447/62366

M3 - Article

VL - 28

SP - 2597

EP - 2604

JO - Journal of the Optical Society of America B: Optical Physics

JF - Journal of the Optical Society of America B: Optical Physics

SN - 0740-3224

ER -