Electronic properties and mobile defects distribution in amorphous semiconducting passive films

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Abstract

A study of the electronic properties of thin (drop 25 nm) a-WO3 and a-Nb2O5 is presented. Based on theory of amorphous semiconductor Schottky barrier the fitting of admittance curves in a large range of electrode potential (around 9 V) and a.c. frequency (100 Hz - 10 kHz) is performed. A density of electronic state distribution (DOS) is derived, which mimics the mobile defects distribution suggested by the classical high field model of oxides growth.
Lingua originaleEnglish
Titolo della pubblicazione ospiteSurface Oxide Films
Pagine116-132
Numero di pagine17
Stato di pubblicazionePublished - 2003

Serie di pubblicazioni

NomeTHE ELECTROCHEMICAL SOCIETY SERIES

All Science Journal Classification (ASJC) codes

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