Electron dynamical response in InP semiconductors driven by fluctuating electric fields

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5 Citazioni (Scopus)


The complexity of electron dynamics in low-doped n-type InP crystals operating under fluctuatingelectric fields is deeply explored and discussed. In this study, we employ a multi-particleMonte Carlo approach to simulate the non-linear transport of electrons inside the semiconductorbulk. All possible scattering events of hot electrons in the medium, the main detailsof the band structure, as well as the heating effects, are taken into account. The results presentedin this study derive from numerical simulations of the electron dynamical responseto the application of a sub-Thz electric field, fluctuating for the superimposition of an externalsource of Gaussian correlated noise. The electronic noise features are statistically investigatedby computing the correlation function of the velocity fluctuations, its spectral densityand the variance, i.e. the total noise power, for different values of amplitude and frequency ofthe driving field. Our results show the presence of a cooperative non-linear behavior of electrons,whose dynamics is strongly affected by the field fluctuations. Moreover, the electronsself-organize among different valleys, giving rise to the reduction of the intrinsic noise. Thiscounterintuitive effect critically depends on the relationship among the characteristic times ofthe external fluctuations and the temporal scales of complex phenomena involved in the electrondynamical response. In particular, the correlation time of the electric field fluctuationsappears to be crucial both for the noise reduction effect and the appearance of an anomalousdiffusion effect.
Lingua originaleEnglish
pagine (da-a)425-431
Numero di pagine7
RivistaChaos, Solitons and Fractals
Stato di pubblicazionePublished - 2015

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.2600.2600???
  • ???subjectarea.asjc.3100.3100???
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