The complexity of electron dynamics in low-doped n-type InP crystals operating under ﬂuctuatingelectric ﬁelds is deeply explored and discussed. In this study, we employ a multi-particleMonte Carlo approach to simulate the non-linear transport of electrons inside the semiconductorbulk. All possible scattering events of hot electrons in the medium, the main detailsof the band structure, as well as the heating effects, are taken into account. The results presentedin this study derive from numerical simulations of the electron dynamical responseto the application of a sub-Thz electric ﬁeld, ﬂuctuating for the superimposition of an externalsource of Gaussian correlated noise. The electronic noise features are statistically investigatedby computing the correlation function of the velocity ﬂuctuations, its spectral densityand the variance, i.e. the total noise power, for different values of amplitude and frequency ofthe driving ﬁeld. Our results show the presence of a cooperative non-linear behavior of electrons,whose dynamics is strongly affected by the ﬁeld ﬂuctuations. Moreover, the electronsself-organize among different valleys, giving rise to the reduction of the intrinsic noise. Thiscounterintuitive effect critically depends on the relationship among the characteristic times ofthe external ﬂuctuations and the temporal scales of complex phenomena involved in the electrondynamical response. In particular, the correlation time of the electric ﬁeld ﬂuctuationsappears to be crucial both for the noise reduction effect and the appearance of an anomalousdiffusion effect.
|Numero di pagine||7|
|Rivista||Chaos, Solitons and Fractals|
|Stato di pubblicazione||Published - 2015|
All Science Journal Classification (ASJC) codes
- Statistical and Nonlinear Physics
- Applied Mathematics