Electroluminescence and transport properties in amorphous silicon nanostructures

Isodiana Crupi, Alessia Irrera, Corrado Bongiorno, Delfo Sanfilippo, Fabio Iacona, Giorgia Franzò, Gianfranco Di Stefano, Calogero D. Presti, Angelo Piana, Andrea Canino, Pier Giorgio Fallica, Francesco Priolo

Risultato della ricerca: Article

64 Citazioni (Scopus)

Abstract

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed. © 2006 IOP Publishing Ltd.
Lingua originaleEnglish
pagine (da-a)1428-1436
Numero di pagine9
RivistaNanotechnology
Volume17
Stato di pubblicazionePublished - 2006

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Electroluminescence
Amorphous silicon
electroluminescence
Transport properties
amorphous silicon
Nanostructures
transport properties
Nanocrystals
Luminescence
nanocrystals
Electric properties
Optical properties
electrical properties
luminescence
optical properties
Temperature
Charge trapping
Nanoclusters
radiative lifetime
nanoclusters

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Chemistry(all)

Cita questo

Crupi, I., Irrera, A., Bongiorno, C., Sanfilippo, D., Iacona, F., Franzò, G., ... Priolo, F. (2006). Electroluminescence and transport properties in amorphous silicon nanostructures. Nanotechnology, 17, 1428-1436.

Electroluminescence and transport properties in amorphous silicon nanostructures. / Crupi, Isodiana; Irrera, Alessia; Bongiorno, Corrado; Sanfilippo, Delfo; Iacona, Fabio; Franzò, Giorgia; Di Stefano, Gianfranco; Presti, Calogero D.; Piana, Angelo; Canino, Andrea; Fallica, Pier Giorgio; Priolo, Francesco.

In: Nanotechnology, Vol. 17, 2006, pag. 1428-1436.

Risultato della ricerca: Article

Crupi, I, Irrera, A, Bongiorno, C, Sanfilippo, D, Iacona, F, Franzò, G, Di Stefano, G, Presti, CD, Piana, A, Canino, A, Fallica, PG & Priolo, F 2006, 'Electroluminescence and transport properties in amorphous silicon nanostructures', Nanotechnology, vol. 17, pagg. 1428-1436.
Crupi I, Irrera A, Bongiorno C, Sanfilippo D, Iacona F, Franzò G e altri. Electroluminescence and transport properties in amorphous silicon nanostructures. Nanotechnology. 2006;17:1428-1436.
Crupi, Isodiana ; Irrera, Alessia ; Bongiorno, Corrado ; Sanfilippo, Delfo ; Iacona, Fabio ; Franzò, Giorgia ; Di Stefano, Gianfranco ; Presti, Calogero D. ; Piana, Angelo ; Canino, Andrea ; Fallica, Pier Giorgio ; Priolo, Francesco. / Electroluminescence and transport properties in amorphous silicon nanostructures. In: Nanotechnology. 2006 ; Vol. 17. pagg. 1428-1436.
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AU - Crupi, Isodiana

AU - Irrera, Alessia

AU - Bongiorno, Corrado

AU - Sanfilippo, Delfo

AU - Iacona, Fabio

AU - Franzò, Giorgia

AU - Di Stefano, Gianfranco

AU - Presti, Calogero D.

AU - Piana, Angelo

AU - Canino, Andrea

AU - Fallica, Pier Giorgio

AU - Priolo, Francesco

PY - 2006

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N2 - We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed. © 2006 IOP Publishing Ltd.

AB - We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed. © 2006 IOP Publishing Ltd.

KW - Engineering (miscellaneous); Materials Science (all); Physics and Astronomy (miscellaneous)

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