Electrochemically prepared oxides for resistive switching devices

Habazaki, H.; Valov, I.

Risultato della ricerca: Article

6 Citazioni (Scopus)

Abstract

Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (generated by the presence of oxygen vacancies into the oxide) and extended states. Impedance measurements disclosed the formation of n-type Nb2O5 and insulating HfO2. Pt top electrode was deposited onto the metal/anodic oxide junctions to fabricate ReRAM cells. Whereas switching behaviour of Nb/anodic Nb2O5/Pt cells was not reliable, good endurance and retention performances were proved in the case of Hf/anodic HfO2/Pt cells, showing that electrochemical growth of the oxides can be a reliable way to fabricate solid electrolytes for resistive switching memories.
Lingua originaleEnglish
pagine (da-a)103-111
Numero di pagine9
RivistaElectrochimica Acta
Volume274
Stato di pubblicazionePublished - 2018

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Electrochemistry

Cita questo

Electrochemically prepared oxides for resistive switching devices. / Habazaki, H.; Valov, I.

In: Electrochimica Acta, Vol. 274, 2018, pag. 103-111.

Risultato della ricerca: Article

Habazaki, H.; Valov, I. 2018, 'Electrochemically prepared oxides for resistive switching devices', Electrochimica Acta, vol. 274, pagg. 103-111.
Habazaki, H.; Valov, I. / Electrochemically prepared oxides for resistive switching devices. In: Electrochimica Acta. 2018 ; Vol. 274. pagg. 103-111.
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abstract = "Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (generated by the presence of oxygen vacancies into the oxide) and extended states. Impedance measurements disclosed the formation of n-type Nb2O5 and insulating HfO2. Pt top electrode was deposited onto the metal/anodic oxide junctions to fabricate ReRAM cells. Whereas switching behaviour of Nb/anodic Nb2O5/Pt cells was not reliable, good endurance and retention performances were proved in the case of Hf/anodic HfO2/Pt cells, showing that electrochemical growth of the oxides can be a reliable way to fabricate solid electrolytes for resistive switching memories.",
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AU - Habazaki, H.; Valov, I.

AU - Macaluso, Roberto

AU - Santamaria, Monica

AU - Zaffora, Andrea

PY - 2018

Y1 - 2018

N2 - Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (generated by the presence of oxygen vacancies into the oxide) and extended states. Impedance measurements disclosed the formation of n-type Nb2O5 and insulating HfO2. Pt top electrode was deposited onto the metal/anodic oxide junctions to fabricate ReRAM cells. Whereas switching behaviour of Nb/anodic Nb2O5/Pt cells was not reliable, good endurance and retention performances were proved in the case of Hf/anodic HfO2/Pt cells, showing that electrochemical growth of the oxides can be a reliable way to fabricate solid electrolytes for resistive switching memories.

AB - Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (generated by the presence of oxygen vacancies into the oxide) and extended states. Impedance measurements disclosed the formation of n-type Nb2O5 and insulating HfO2. Pt top electrode was deposited onto the metal/anodic oxide junctions to fabricate ReRAM cells. Whereas switching behaviour of Nb/anodic Nb2O5/Pt cells was not reliable, good endurance and retention performances were proved in the case of Hf/anodic HfO2/Pt cells, showing that electrochemical growth of the oxides can be a reliable way to fabricate solid electrolytes for resistive switching memories.

KW - Anodizing; Hf oxide; Nb oxide; ReRAM; Resistive switching; Chemical Engineering (all); Electrochemistry

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UR - http://www.journals.elsevier.com/electrochimica-acta/

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JO - Electrochimica Acta

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