Electrochemical Fabrication of Inorganic/Organic Field Effect Transistor

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After discovery of conducting polymers and the possibility to modify their electricalproperties (from insulating to metallic-like behaviour) by doping and a careful choiceof the processing conditions, a large amount of research effort has been devoted to thetheoretical understanding of their solid state properties as well as to exploit the possibleapplication of conducting polymers in many technological fields including: large areaorganic electronics, polymer photovoltaic cell and sensors (1-2). Organic thin-filmtransistors appears very promising for the development of low cost, flexible anddisposable plastic electronics. In order to reduce the operating voltage it has beensuggested in literature the use of mixed organic-inorganic thin film transistors byassembling a structure formed by: metal (bottom contact)/ dielectric layer(gate)/organic semiconductor/top contact (source/drain).According to this, we have successfully exploited the possibility to growphotoelectrochemically on a wide band gap oxide dielectric (Ta2O5) conductingpolymers, which are known to underway an electrical transition from metallic tosemiconducting state under suitable polarization into solution (polypyrrole) (3).Starting from these results, in this work we describe and discuss the electrochemicalfabrication of Inorganic Organic Field Effect Transistor using 3-4 polyethylenedioxythiophene (PEDOT) as conducting polymer and anodic films on Ti-10at.%Zralloy as dielectrics, due to their high dielectric constant and low leakage current (4).The fabricated metal/oxide/polymer junctions are characterized by photocurrentspectroscopy (PCS) and scanning electron microscopy (SEM). Finally, outputtransistoric characteristic are recorded in order to test the performance of the junctionsas IOFET.
Lingua originaleEnglish
Numero di pagine1
Stato di pubblicazionePublished - 2010


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