In this work, metal-oxide-semiconductor (MOS)-like sensors in which deoxyribonucleic acid (DNA) strands are covalently immobilized either on Si oxide or on a gold surface were electrically characterized. Si oxide fabrication process allowed us to have a surface insensitive to the solution pH. A significant shift in the flat band voltage was measured after single strand DNA immobilization (+0.47 ± 0.04 V) and after the complementary strand binding (+0.07 ± 0.02 V). The results show that DNA sensing can be performed using a MOS structure which can be easily integrated in a more complex design, thus avoiding the problems related to the integration of micro-electrochemical cells.
|Numero di pagine||4|
|Rivista||Applied Physics Letters|
|Stato di pubblicazione||Published - 2012|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Busacca, A., Aiello, Cannella, Lombardo, & Libertino (2012). Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures. Applied Physics Letters, 101.