Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide

Isodiana Crupi, Privitera, Lombardo, Vulpio, Isodiana Crupi, Corrado Bongiorno, Fazio, Corrado Spinella, Gerardi, Liao

Risultato della ricerca: Article

21 Citazioni (Scopus)

Abstract

Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of Physics.
Lingua originaleEnglish
pagine (da-a)5552-5558
Numero di pagine7
RivistaJournal of Applied Physics
Volume89
Stato di pubblicazionePublished - 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Crupi, I., Privitera, Lombardo, Vulpio, Crupi, I., Bongiorno, C., Fazio, Spinella, C., Gerardi, & Liao (2001). Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide. Journal of Applied Physics, 89, 5552-5558.