Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors

Mauro Mosca, Jean-Luc Reverchon, Jean-Yves Duboz, Franck Omnés, Mauro Mosca

Risultato della ricerca: Article

18 Citazioni (Scopus)

Abstract

The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances
Lingua originaleEnglish
pagine (da-a)4367-4370
Numero di pagine4
RivistaJournal of Applied Physics
Volume95
Stato di pubblicazionePublished - 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Mosca, M., Reverchon, J-L., Duboz, J-Y., Omnés, F., & Mosca, M. (2004). Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors. Journal of Applied Physics, 95, 4367-4370.