Abstract
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances
Lingua originale | English |
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pagine (da-a) | 4367-4370 |
Numero di pagine | 4 |
Rivista | Journal of Applied Physics |
Volume | 95 |
Stato di pubblicazione | Published - 2004 |
All Science Journal Classification (ASJC) codes
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