Abstract
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances
| Lingua originale | English |
|---|---|
| pagine (da-a) | 4367-4370 |
| Numero di pagine | 4 |
| Rivista | Journal of Applied Physics |
| Volume | 95 |
| Stato di pubblicazione | Published - 2004 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Mosca, M., Reverchon, J-L., Duboz, J-Y., Omnés, F., & Mosca, M. (2004). Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors. Journal of Applied Physics, 95, 4367-4370.