Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films

Isodiana Crupi, Grimaldi, Isodiana Crupi, Piro, Rimini, De Bastiani

Risultato della ricerca: Article

10 Citazioni (Scopus)

Abstract

The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation. © 2008 Elsevier B.V. All rights reserved.
Lingua originaleEnglish
pagine (da-a)2511-2514
Numero di pagine4
RivistaNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume266
Stato di pubblicazionePublished - 2008

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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