Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

Angelo Carollo; Davide Valenti; Bernardo Spagnolo; Ivan N. Antonov; null Koryazhkina; null Novikov; null Shishmakova; null Shenina; null Agudov; null Spagnolo; Oleg N. Gorshkov; Dmitry O. Filatov

Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

Angelo Carollo, Davide Valenti, Bernardo Spagnolo, Ivan N. Antonov, Koryazhkina, Novikov, Shishmakova, Shenina, Agudov, Spagnolo, Oleg N. Gorshkov, Dmitry O. Filatov

Risultato della ricerca: Article › peer review

5 Citazioni (Scopus)

Abstract

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

Lingua originale	English
pagine (da-a)	111810-
Numero di pagine	6
Rivista	Chaos, Solitons and Fractals
Volume	156
Stato di pubblicazione	Published - 2022

All Science Journal Classification (ASJC) codes

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???subjectarea.asjc.2600.2600???
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title = "Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor",

abstract = "The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.",

author = "Angelo Carollo and Davide Valenti and Bernardo Spagnolo and Antonov, {Ivan N.} and Koryazhkina and Novikov and Shishmakova and Shenina and Agudov and Spagnolo and Gorshkov, {Oleg N.} and Filatov, {Dmitry O.}",

year = "2022",

language = "English",

volume = "156",

pages = "111810--",

journal = "Chaos, Solitons and Fractals",

issn = "0960-0779",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

AU - Carollo, Angelo

AU - Valenti, Davide

AU - Spagnolo, Bernardo

AU - Antonov, Ivan N.

AU - Koryazhkina, null

AU - Novikov, null

AU - Shishmakova, null

AU - Shenina, null

AU - Agudov, null

AU - Spagnolo, null

AU - Gorshkov, Oleg N.

AU - Filatov, Dmitry O.

PY - 2022

Y1 - 2022

N2 - The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

AB - The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

UR - http://hdl.handle.net/10447/543195

M3 - Article

SN - 0960-0779

VL - 156

SP - 111810-

JO - Chaos, Solitons and Fractals

JF - Chaos, Solitons and Fractals

ER -

Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

Abstract

All Science Journal Classification (ASJC) codes

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