The effects of room temperature γ-ray irradiation up to a dose of ∼1300 kGy are investigated by Electron paramagnetic resonance (EPR) measurements in amorphous silicon dioxide (a-SiO2) produced by a sol–gel synthesis method that introduces OSiSiO oxygen deficiency. We have found that exposure to radiation generates the center with the same spectral features found in high purity commercial a-SiO2. The maximum concentration of defects induced in this sol–gel material indicates that its resistance to radiation is comparable to that of synthetic fused a-SiO2. The concentration of center increases with irradiation, featuring a sublinear dose dependence up to the highest investigated dose and showing no saturation effects. This defect generation process suggests that the chemically induced precursor influences the mechanisms of center generation.
|Numero di pagine||4|
|Rivista||Journal of Non-Crystalline Solids|
|Stato di pubblicazione||Published - 2007|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Agnello, S., Parlato, A., Paleari, A., & Chiodini, N. (2007). E’γ centers induced by γ irradiation in sol-gel synthesized oxygen deficient amorphous silicon dioxide. Journal of Non-Crystalline Solids, 353, 573-576.