Doping dependence of spin dynamics of drifting electrons in GaAs bulks

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2 Citazioni (Scopus)

Abstract

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in thepresence of a static electric field in an n-type GaAs bulk. The transport of electrons and the spin dynamics aresimulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scatteringmechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through theD’yakonov–Perel mechanism, which is the dominant mechanism in III–V semiconductors. The evolution ofspin polarization is analyzed by computing lifetimes and depolarization lengths as a function of the dopingdensity in the range 10^{13} - 5*10^{16} cm^{-3}, for different values of the amplitude of the static electric field(0.1 - 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, moreevident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spindepolarization length shows a nonmonotonic behaviour with the density. At the room temperature, spin lifetimesand depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.
Lingua originaleEnglish
pagine (da-a)250-252
Numero di pagine3
RivistaActa Physica Polonica A
Volume119
Stato di pubblicazionePublished - 2011

All Science Journal Classification (ASJC) codes

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