Distribution and generation of traps in SiO2/Al2O3 gate stacks

Isodiana Crupi, Philippe Roussel, Bogdan Govoreanu, David P. Brunco, Isodiana Crupi, Jan Van Houdt, Robin Degraeve

Risultato della ricerca: Article

5 Citazioni (Scopus)

Abstract

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. © 2007 Elsevier Ltd. All rights reserved.
Lingua originaleEnglish
pagine (da-a)525-527
Numero di pagine3
RivistaMICROELECTRONICS RELIABILITY
Volume47
Stato di pubblicazionePublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Entra nei temi di ricerca di 'Distribution and generation of traps in SiO2/Al2O3 gate stacks'. Insieme formano una fingerprint unica.

  • Cita questo

    Crupi, I., Roussel, P., Govoreanu, B., Brunco, D. P., Crupi, I., Van Houdt, J., & Degraeve, R. (2007). Distribution and generation of traps in SiO2/Al2O3 gate stacks. MICROELECTRONICS RELIABILITY, 47, 525-527.