Distribution and generation of traps in SiO2/Al2O3 gate stacks

Isodiana Crupi, David P. Brunco, Jan Van Houdt, Robin Degraeve, Philippe Roussel, Bogdan Govoreanu

Risultato della ricerca: Article

5 Citazioni (Scopus)

Abstract

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. © 2007 Elsevier Ltd. All rights reserved.
Lingua originaleEnglish
pagine (da-a)525-527
Numero di pagine3
RivistaMicroelectronics Reliability
Volume47
Stato di pubblicazionePublished - 2007

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Electron energy levels
Electric potential

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cita questo

Crupi, I., Brunco, D. P., Van Houdt, J., Degraeve, R., Roussel, P., & Govoreanu, B. (2007). Distribution and generation of traps in SiO2/Al2O3 gate stacks. Microelectronics Reliability, 47, 525-527.

Distribution and generation of traps in SiO2/Al2O3 gate stacks. / Crupi, Isodiana; Brunco, David P.; Van Houdt, Jan; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan.

In: Microelectronics Reliability, Vol. 47, 2007, pag. 525-527.

Risultato della ricerca: Article

Crupi, I, Brunco, DP, Van Houdt, J, Degraeve, R, Roussel, P & Govoreanu, B 2007, 'Distribution and generation of traps in SiO2/Al2O3 gate stacks', Microelectronics Reliability, vol. 47, pagg. 525-527.
Crupi I, Brunco DP, Van Houdt J, Degraeve R, Roussel P, Govoreanu B. Distribution and generation of traps in SiO2/Al2O3 gate stacks. Microelectronics Reliability. 2007;47:525-527.
Crupi, Isodiana ; Brunco, David P. ; Van Houdt, Jan ; Degraeve, Robin ; Roussel, Philippe ; Govoreanu, Bogdan. / Distribution and generation of traps in SiO2/Al2O3 gate stacks. In: Microelectronics Reliability. 2007 ; Vol. 47. pagg. 525-527.
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AU - Roussel, Philippe

AU - Govoreanu, Bogdan

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AB - In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. © 2007 Elsevier Ltd. All rights reserved.

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