Delocalized Nature of the E’_delta Center in Amorphous Silicon Dioxide

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We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect inducedby gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doubletcharacterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpairedelectron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfinedoublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave functionof this center is actually delocalized over four nearly equivalent silicon atoms.
Lingua originaleUndefined/Unknown
pagine (da-a)125501-1-125501-4
RivistaPhysical Review Letters
Stato di pubblicazionePublished - 2005

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