We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect inducedby gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doubletcharacterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpairedelectron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfinedoublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave functionof this center is actually delocalized over four nearly equivalent silicon atoms.
|Rivista||Physical Review Letters|
|Stato di pubblicazione||Published - 2005|
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