Delocalized nature of the E’_delta center in amorphous silicon dioxide

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Abstract

We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.
Lingua originaleEnglish
pagine (da-a)125501 1-125501 4
RivistaPhysical Review Letters
Volume94
Stato di pubblicazionePublished - 2005

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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