Delocalized nature of the E’_delta center in amorphous silicon dioxide

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Abstract

We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.
Lingua originaleEnglish
pagine (da-a)125501 1-125501 4
RivistaPhysical Review Letters
Volume94
Stato di pubblicazionePublished - 2005

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amorphous silicon
electron paramagnetic resonance
silicon dioxide
resonance lines
point defects
gamma rays
irradiation
nuclei
defects
silicon
atoms
electrons
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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title = "Delocalized nature of the E’_delta center in amorphous silicon dioxide",
abstract = "We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.",
author = "Gelardi, {Franco Mario} and Simonpietro Agnello and Gianpiero Buscarino",
year = "2005",
language = "English",
volume = "94",
pages = "125501 1--125501 4",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",

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T1 - Delocalized nature of the E’_delta center in amorphous silicon dioxide

AU - Gelardi, Franco Mario

AU - Agnello, Simonpietro

AU - Buscarino, Gianpiero

PY - 2005

Y1 - 2005

N2 - We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.

AB - We report an experimental study by electron paramagnetic resonance (EPR) of E'_delta point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I = 1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E'_delta center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.

UR - http://hdl.handle.net/10447/9852

M3 - Article

VL - 94

SP - 1255011

EP - 1255014

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

ER -