Abstract
We compare the E', H(I) and Si-ODC(II) contents in a low-OH high-purity a-SiO2 both in bulk and fibre forms. The investigation includes the effects of hydrogen loading of the fibre. We found that the H(I) centre appears during irradiation and that its concentration tends to increase with the dose in fibers impregnated with molecular hydrogen. For the hydrogen-treated fibers, no experimental repeatability could be found in the measurements of E' and Si-ODC(II) although an acceptable agreement was still found in non-hydrogenated samples. This result suggests a possible complex reaction mechanisms under gamma radiation when the glass has a hydrogen excess.
| Lingua originale | English |
|---|---|
| pagine (da-a) | 2121-2125 |
| Numero di pagine | 5 |
| Rivista | IEEE Transactions on Nuclear Science |
| Volume | 55 |
| Stato di pubblicazione | Published - 2008 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
Cita questo
Agnello, S., Dusseau, L., Brichard, B., & Nuccio, L. (2008). Comparison Between Point Defect Generation by gamma-rays in Bulk and Fibre Samples of High Purity Amorphous SiO2”. IEEE Transactions on Nuclear Science, 55, 2121-2125.