Chemical Bath Deposition as a Simple Way to Grow Isolated and Coalesced ZnO Nanorods for Light-Emitting Diodes Fabrication

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1 Citazione (Scopus)

Abstract

A way to grow and characterize isolated and coalesced ZnO nanorods on p-GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process and the concentration of the nutrient solution in the bath. Increasing the duration of the process, as well as the concentration of the solution, leads to compact and sound layers instead of separated nanorods. However, too high concentrations stop the growth process. Light-emitting diodes fabricated on these ZnO-p-GaN heterostructure have a peak of electroluminescence at 400 nm and exhibit interesting electrical and optical properties. Optical power of 225 μW at 0.425 A/cm2and a related wall-plug efficiency of 0.23% are obtained with 2 mm-diameter LEDs fabricated on a ZnO layer grown for 30 h in a solution of concentration 70 mM. The performances shown by these LEDs can be used as a way to test the quality of the ZnO growth.
Lingua originaleEnglish
Pagine1-6
Numero di pagine6
Stato di pubblicazionePublished - 2018

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Nanorods
nanorods
Light emitting diodes
baths
light emitting diodes
Fabrication
fabrication
Electroluminescence
Sapphire
Heterojunctions
nutrients
Electric properties
plugs
Optical properties
Acoustic waves
electroluminescence
sapphire
electrical properties
optical properties
acoustics

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Industrial and Manufacturing Engineering
  • Instrumentation

Cita questo

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abstract = "A way to grow and characterize isolated and coalesced ZnO nanorods on p-GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process and the concentration of the nutrient solution in the bath. Increasing the duration of the process, as well as the concentration of the solution, leads to compact and sound layers instead of separated nanorods. However, too high concentrations stop the growth process. Light-emitting diodes fabricated on these ZnO-p-GaN heterostructure have a peak of electroluminescence at 400 nm and exhibit interesting electrical and optical properties. Optical power of 225 μW at 0.425 A/cm2and a related wall-plug efficiency of 0.23{\%} are obtained with 2 mm-diameter LEDs fabricated on a ZnO layer grown for 30 h in a solution of concentration 70 mM. The performances shown by these LEDs can be used as a way to test the quality of the ZnO growth.",
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AU - Crupi, Isodiana

AU - Lullo, Giuseppe

AU - Macaluso, Roberto

AU - Giaconia, Giuseppe Costantino

AU - Mosca, Mauro

AU - Feltin, Eric

AU - Mirabella, null

PY - 2018

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N2 - A way to grow and characterize isolated and coalesced ZnO nanorods on p-GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process and the concentration of the nutrient solution in the bath. Increasing the duration of the process, as well as the concentration of the solution, leads to compact and sound layers instead of separated nanorods. However, too high concentrations stop the growth process. Light-emitting diodes fabricated on these ZnO-p-GaN heterostructure have a peak of electroluminescence at 400 nm and exhibit interesting electrical and optical properties. Optical power of 225 μW at 0.425 A/cm2and a related wall-plug efficiency of 0.23% are obtained with 2 mm-diameter LEDs fabricated on a ZnO layer grown for 30 h in a solution of concentration 70 mM. The performances shown by these LEDs can be used as a way to test the quality of the ZnO growth.

AB - A way to grow and characterize isolated and coalesced ZnO nanorods on p-GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process and the concentration of the nutrient solution in the bath. Increasing the duration of the process, as well as the concentration of the solution, leads to compact and sound layers instead of separated nanorods. However, too high concentrations stop the growth process. Light-emitting diodes fabricated on these ZnO-p-GaN heterostructure have a peak of electroluminescence at 400 nm and exhibit interesting electrical and optical properties. Optical power of 225 μW at 0.425 A/cm2and a related wall-plug efficiency of 0.23% are obtained with 2 mm-diameter LEDs fabricated on a ZnO layer grown for 30 h in a solution of concentration 70 mM. The performances shown by these LEDs can be used as a way to test the quality of the ZnO growth.

UR - http://hdl.handle.net/10447/356191

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