Charge transport properties in CdZnTe detectors grown by the verticalBridgman technique

Leonardo Abbene, Marchini, Honkimaki, Zappettini, Ezio Caroli, Auricchio

Risultato della ricerca: Articlepeer review

26 Citazioni (Scopus)


Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT)detectors for a large variety of applications such as medical, industrial, and space research. Wepresent the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgmanmethod and by the boron oxide encapsulated vertical Bridgman method, which has been recentlyimplemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartzcrucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contactbetween the crystal and the crucible, thereby allowing larger single grains with a lower dislocationdensity to be obtained. Several mono-electrode detectors were realized, with each having two planargold contacts. The samples are characterized by an active area of about 7 mm 7 mm andthicknesses ranging from 1 to 2mm. The charge transport properties of the detectors have beenstudied by mobility-lifetime (l s) product measurements, carried out at the European SynchrotronRadiation Facility (Grenoble, France) in the planar transverse field configuration, where theimpinging beam direction is orthogonal to the collecting electric field. We have performed severalfine scans between the electrodes with a beam spot of 10 lm 10 lm at various energies from 60 to400 keV. In this work, we present the test results in terms of the (l s) product of both chargecarriers.
Lingua originaleEnglish
pagine (da-a)124502-1-124502-7
Numero di pagine7
RivistaJournal of Applied Physics
Stato di pubblicazionePublished - 2011

All Science Journal Classification (ASJC) codes

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